P S Wong et al 2008 Nanotechnology 19 435710 doi:10.1088/0957-4484/19/43/435710
P S Wong1, B L Liang1, V G Dorogan2, A R Albrecht3, J Tatebayashi1, X He3, N Nuntawong3, Yu I Mazur2, G J Salamo2, S R J Brueck3 and D L Huffaker1
Show affiliationsInAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ~ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.
Condensed matter: electrical, magnetic and optical
Issue 43 (22 October 2008)
Received 23 May 2008, in final form 28 July 2008
Published 22 September 2008
P S Wong et al 2008 Nanotechnology 19 435710
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