R Sordan et al 2008 Nanotechnology 19 335201 doi:10.1088/0957-4484/19/33/335201
R Sordan, A Miranda, J Osmond, D Colombo, D Chrastina, G Isella and H von Känel
Show affiliationsThe current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 104 is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.
73.30.+y Surface double layers, Schottky barriers, and work functions
Issue 33 (20 August 2008)
Received 9 March 2008, in final form 10 June 2008
Published 7 July 2008
R Sordan et al 2008 Nanotechnology 19 335201
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