E Nogales et al 2008 Nanotechnology 19 035713 doi:10.1088/0957-4484/19/03/035713
E Nogales, B Méndez and J Piqueras
Show affiliationsErbium doped β-Ga2O3 nanowires and microwires have been obtained by a vapour–solid process from an initial mixture of Ga2O3 and Er2O3 powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as β-Ga2O3 phases in the microwires. Scanning electron microscopy (SEM) images show that the larger microwires have a nearly rectangular cross-section. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of the β-Ga2O3 nanowires. The nanostructures have been studied by means of the cathodoluminescence technique in the scanning electron microscope. Er intraionic blue, green and red emission lines are observed in luminescence spectra even at room temperature, which confirms the optical activity of the rare earth ions in the grown structures. Mapping of the main 555 nm emission intensity shows a non-homogeneous distribution of Er ions in the microstructures.
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
Condensed matter: electrical, magnetic and optical
Issue 3 (23 January 2008)
Received 12 September 2007, in final form 19 November 2007
Published 14 December 2007
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