D Carbone et al 2008 Nanotechnology 19 035304 doi:10.1088/0957-4484/19/03/035304
D Carbone1, A Alija1,2, O Plantevin3, R Gago4, S Facsko5 and T H Metzger1
Show affiliationsWe present a study of the early stage of ripple formation on Ge(001) surfaces irradiated by a 1 keV Xe+ ion beam at room temperature and near-normal incidence. A combination of a grazing incidence x-ray scattering technique and atomic force microscopy allowed us to observe a variation of the symmetry of the surface nanopattern upon increase of the ion fluence. The isotropic dot pattern formed during the first minutes of sputtering evolves into an anisotropic ripple pattern for longer sputtering time. These results provide a new basis for further steps in the theoretical description of the morphology evolution during ion beam sputtering.
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
61.80.Jh Ion radiation effects
68.37.Ps Atomic force microscopy (AFM)
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 3 (23 January 2008)
Received 15 October 2007, in final form 14 November 2007
Published 13 December 2007
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