Taichi Nishio et al 2008 Nanotechnology 19 035202 doi:10.1088/0957-4484/19/03/035202
Taichi Nishio1, Yuji Miyato1, Kei Kobayashi2, Kenji Ishida3, Kazumi Matsushige1 and Hirofumi Yamada1,4
Show affiliationsWe produced local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin films on a carbon nanotube field-effect transistor (CN-FET) channel by atomic force microscopy (AFM). The drain current versus gate voltage (Id–Vg) curves measured after forming the local polarized domains showed a shift in the threshold voltages. We also found that the amount of the shifts in the threshold voltages gradually decreased during the measurement of this characteristic over 100 h after forming the polarized domains. The mechanisms of the shifts in the threshold voltages and their decreasing behaviour were explained in terms of the excessive charges that were induced upon the formation of the polarized domains.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 3 (23 January 2008)
Received 15 September 2007, in final form 8 November 2007
Published 13 December 2007
Taichi Nishio et al 2008 Nanotechnology 19 035202
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