Z Zaâboub et al 2008 Nanotechnology 19 285715 doi:10.1088/0957-4484/19/28/285715
Z Zaâboub1, B Ilahi1,3, L Sfaxi1, H Maaref1, B Salem2,4, V Aimez2 and D Morris2
Show affiliationsIn this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 × 1010–1014 ions cm−2) and subsequent thermal annealing. The energy shift of the main QD emission band is found to increase with increasing implantation dose. Our measurements show clear evidence of an inhomogeneous In/Ga intermixing at low proton implantation doses (≤5 × 1011 ions cm−2), giving rise to the coexistence of intermixed and non-intermixed QDs. For higher implantation doses, a decrease of both the PL linewidth and the intersublevel spacing energy have been found to occur, suggesting that the dot-size, dot-composition and dot-strain distributions evolve towards more uniform ones.
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 28 (16 July 2008)
Received 3 April 2008, in final form 8 May 2008
Published 3 June 2008
Z Zaâboub et al 2008 Nanotechnology 19 285715
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