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Oxygen-mediated electron transport through hybrid silicon–organic interfaces

Benedetta Bonferroni1,2, Andrea Ferretti1,2, Arrigo Calzolari2, Alice Ruini1,2, Marilia J Caldas3 and Elisa Molinari1,2

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We investigate from first principles the electronic and transport properties of hybrid organic/silicon interfaces of relevance to molecular electronics. We focus on conjugated molecules bonded to hydrogenated Si through hydroxyl or thiol groups. The electronic structure of the systems is addressed within density functional theory, and the electron transport across the interface is directly evaluated within the Landauer approach. The microscopic effects of molecule–substrate bonding on the transport efficiency are explicitly analyzed, and the oxygen-bonded interface is identified as a candidate system when preferential hole transfer is needed.


PACS

73.20.At Surface states, band structure, electron density of states

71.15.Mb Density functional theory, local density approximation, gradient and other corrections

73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 28 (16 July 2008)

Received 25 March 2008, in final form 24 April 2008

Published 2 June 2008



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