G Boulousis et al 2008 Nanotechnology 19 255301 doi:10.1088/0957-4484/19/25/255301
G Boulousis, V Constantoudis, G Kokkoris and E Gogolides
Show affiliationsSurface roughness and nano-morphology in SF6 plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
Issue 25 (25 June 2008)
Received 8 January 2008, in final form 17 April 2008
Published 14 May 2008
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