Xin Jiang et al 2008 Nanotechnology 19 205702 doi:10.1088/0957-4484/19/20/205702
Xin Jiang1, Hans-Jörg Deiseroth2, Changzhi Gu3, Kledi Xhaxhiu2, Yang Huang3, Junjie Li3, Renchao Che3 and Zongli Wang3
Show affiliationsQuaternary mixed-valence compound TlIn4S5Cl micro- and nanowires are prepared by partial substitution of chalcogen with halogen starting from a stoichiometric mixture of TlCl, In and S. Their electrical conductivity and gas sensitivity properties are investigated by using standard four-terminal systems. The specific nanowire resistivity is about 107 Ω cm and corresponds to the value of a typical undoped semiconductor in air. This resistivity is, however, extremely sensitive to NO2 (sensitivity about 150) or NH3, with a rapid response of about 2 s and recovery times. This phenomenon is supposed to be particularly important for future nanodevice applications.
73.63.-b Electronic transport in nanoscale materials and structures
81.16.-c Methods of nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
Issue 20 (21 May 2008)
Received 13 December 2007, in final form 11 March 2008
Published 15 April 2008
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