Akinori Saeki et al 2008 Nanotechnology 19 015705 doi:10.1088/0957-4484/19/01/015705
Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model
Akinori Saeki1,3, Takahiro Kozawa1, Seiichi Tagawa1,3, Heidi B Cao2, Hai Deng2 and Michael J Leeson2
Show affiliationsLine edge roughness (LER) of patterned features in chemically amplified (CA) resists is formed in the acid generation stage and expected to be moderated by the acid diffusion and development process. It is essential to obtain information on the limit of LER in order to realize next-generation lithographies such as electron beam or extreme ultraviolet. Here, we report for the first time a process simulator based on physical and chemical reaction mechanisms. The LER of a positive-tone CA resist after development is investigated by Monte Carlo simulation and Mack's dissolution model. We found that the LER (high frequency) of less than 1.2 nm is achievable, although the process conditions and material design for achieving such a small LER are strict.
- PACS
- Subjects
- Dates
-
Issue 1 (9 January 2008)
Received 9 May 2007, in final form 16 October 2007
Published 29 November 2007
-
Line edge roughness after development in a positive-tone chemically amplified resist of post-optical lithography investigated by Monte Carlo simulation and a dissolution model
Akinori Saeki et al 2008 Nanotechnology 19 015705
-
Update of the BIPM comparison BIPM.RI(II)-K1.F-18 of activity measurements of the radionuclide 18F to include the NPL
G Ratel et al 2003 Metrologia 40 06027
-
COOMET.RI(II)-S1.Rn-222 (169/UA/98): Rn-222 volume activity comparison
V Skliarov et al 2009 Metrologia 46 06006
-
The study of an iterative method for the reconstruction of images corrupted by Poisson and Gaussian noise
F Benvenuto et al 2008 Inverse Problems 24 035016
-
Boiling heat transfer and two-phase flow of water in a single shallow microchannel with a uniform or diverging cross section
Po Chang Lee and Chin Pan 2008 J. Micromech. Microeng. 18 025005
-
Energy measurement at the TeV scale
Richard Wigmans 2008 New J. Phys. 10 025003
-
Marginal deformations of field theories with AdS4 duals
Jerome P. Gauntlett et al JHEP08(2005)030
-
On zero-point energy, stability and Hagedorn behavior of type-IIB strings on pp-waves
Francesco Bigazzi and Aldo Lorenzo Cotrone JHEP08(2003)052
-
Singular Liouville fields and spiky strings in
1,2 and SL(2,)
George Jorjadze JHEP10(2009)092
-
Nonequilibrium radio frequency plasma interacting with a surface
Toshiaki Makabe and Takashi Yagisawa 2009 Plasma Sources Sci. Technol. 18 014016
Users also read
What's this?- Type I collagen-templated assembly of silver nanoparticles and their application in surface-enhanced Raman scattering
- Biomimetic synthesis of oriented hydroxyapatite mediated by nonionic surfactants
- Controlling orientation of V2O5 nanowires within micropatterns via microcontact printing combined with the gluing Langmuir–Blodgett technique
Related review articles
What's this?- Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective
- Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art
- Micro- and nanoporous materials produced using accelerated heavy ion beams