J R R Bortoleto et al 2008 Nanotechnology 19 015601 doi:10.1088/0957-4484/19/01/015601
J R R Bortoleto1, J G Zelcovit, H R Gutiérrez2, J Bettini3 and M A Cotta
Show affiliationsBuried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals.
Issue 1 (9 January 2008)
Received 30 August 2007, in final form 19 October 2007
Published 29 November 2007
J R R Bortoleto et al 2008 Nanotechnology 19 015601
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