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Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Jaewon Jang1, Kyoungah Cho1, Sang Heon Lee2 and Sangsig Kim1

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Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ~103 and a field-effect mobility of 4.1 cm2 V−1 s−1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ~103 and a field-effect mobility of 4.0 cm2 V−1 s−1.


PACS

85.30.Tv Field effect devices

85.30.De Semiconductor-device characterization, design, and modeling

85.35.-p Nanoelectronic devices

Subjects

Electronics and devices

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 1 (9 January 2008)

Received 16 July 2007, in final form 10 October 2007

Published 29 November 2007



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