Jaewon Jang et al 2008 Nanotechnology 19 015204 doi:10.1088/0957-4484/19/01/015204
Jaewon Jang1, Kyoungah Cho1, Sang Heon Lee2 and Sangsig Kim1
Show affiliationsTransparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ~103 and a field-effect mobility of 4.1 cm2 V−1 s−1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ~103 and a field-effect mobility of 4.0 cm2 V−1 s−1.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 1 (9 January 2008)
Received 16 July 2007, in final form 10 October 2007
Published 29 November 2007
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