Ji-Yong Park 2007 Nanotechnology 18 095202 doi:10.1088/0957-4484/18/9/095202
Ji-Yong Park
Show affiliationsAn ultimate scaling in the gate width in a carbon nanotube field-effect transistor (CNTFET) is demonstrated with a gate electrode which is formed by another CNT (width of ~3 nm) with conventional nanofabrication followed by manipulations with an atomic force microscope (AFM). The transport characteristics of the CNTFET with the CNT gate show marked improvements in device performance compared to one with the global back gate. This also shows that the AFM-based manipulations can help in fabricating prototypes of novel nanoelectronic devices based on CNTs.
Issue 9 (7 March 2007)
Received 20 September 2006, in final form 4 December 2006
Published 24 January 2007
Ji-Yong Park 2007 Nanotechnology 18 095202
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