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Carbon nanotube field-effect transistor with a carbon nanotube gate electrode

Ji-Yong Park

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An ultimate scaling in the gate width in a carbon nanotube field-effect transistor (CNTFET) is demonstrated with a gate electrode which is formed by another CNT (width of ~3 nm) with conventional nanofabrication followed by manipulations with an atomic force microscope (AFM). The transport characteristics of the CNTFET with the CNT gate show marked improvements in device performance compared to one with the global back gate. This also shows that the AFM-based manipulations can help in fabricating prototypes of novel nanoelectronic devices based on CNTs.


PACS

85.35.Kt Nanotube devices

85.30.Tv Field effect devices

Subjects

Electronics and devices

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 9 (7 March 2007)

Received 20 September 2006, in final form 4 December 2006

Published 24 January 2007



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