Kuan Eng Johnson Goh et al 2007 Nanotechnology 18 065301 doi:10.1088/0957-4484/18/6/065301
Kuan Eng Johnson Goh1,2,3, L Oberbeck1,2, M J Butcher2, N J Curson1,2, F J Rueß1,2 and M Y Simmons1,2
Show affiliationsWe present a comparative study of the use of a GaP solid source as an alternative to gaseous PH3 for controlled phosphorus δ-doping of lithographic patterns on H:Si(001) fabricated by scanning tunnelling microscopy (STM). Whilst our electrical studies show that P δ-doping of Si with the GaP solid source and gaseous PH3 result in essentially the same electrical characteristics, our STM studies reveal that P2 molecules from the GaP source exhibit a lower selectivity between bare Si(001) and H:Si(001) compared to PH3 molecules. We discuss the significance of our findings in the context of fabricating nanoscale P dopant devices in Si using STM-based lithography.
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.47.Fg Semiconductor surfaces
73.63.-b Electronic transport in nanoscale materials and structures
Condensed matter: electrical, magnetic and optical
Issue 6 (14 February 2007)
Received 10 November 2006, in final form 15 December 2006
Published 10 January 2007
Kuan Eng Johnson Goh et al 2007 Nanotechnology 18 065301
F J Rueß et al 2007 Nanotechnology 18 044023
F J Rueß et al 2005 Nanotechnology 16 2446
R W Penney et al 1993 J. Phys. A: Math. Gen. 26 3681
Jean-Philippe Bouchaud and Marc Mézard 1997 J. Phys. A: Math. Gen. 30 7997
E Korutcheva et al 1994 J. Phys. A: Math. Gen. 27 L645
Yukito Iba 1999 J. Phys. A: Math. Gen. 32 3875
J L van Hemmen and R G Palmer 1979 J. Phys. A: Math. Gen. 12 563
Kazuyuki Tanaka 2002 J. Phys. A: Math. Gen. 35 R81
Yoshiyuki Kabashima and David Saad 2004 J. Phys. A: Math. Gen. 37 R1