F Iacopi et al 2007 Nanotechnology 18 505307 doi:10.1088/0957-4484/18/50/505307
Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth
F Iacopi1,5, P M Vereecken1, M Schaekers1, M Caymax1, N Moelans2, B Blanpain2, O Richard1, C Detavernier3 and H Griffiths4
Show affiliationsAu nanoparticles are efficient catalysts for the vapour–solid–liquid (VLS) growth of semiconductor nanowires, but Au poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts for Si nanowire growth can be broadened when the need for catalytic precursor dissociation is eliminated through the use of plasma enhancement. However, in this regime the incubation time for the activation of VLS growth must be minimized to avoid burying the catalyst particles underneath an amorphous Si layer. We show that the combined use of plasma enhancement and the use of a catalyst such as In, already in a liquid form at the growth temperature, is a powerful method for obtaining Si nanowire growth with high yield. Si nanowires grown by this method are monocrystalline and generally oriented in the 
direction.
- PACS
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
- Subjects
- Dates
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Issue 50 (19 December 2007)
Received 14 June 2007, in final form 13 August 2007
Published 23 November 2007
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Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth
F Iacopi et al 2007 Nanotechnology 18 505307
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Unbinding force of chemical bonds and tensile strength in strong crystals
Xiaoju Guo et al 2009 J. Phys.: Condens. Matter 21 485405
-
The Peierls stress of the moving
screw dislocation in Ta
Ruiping Liu et al 2009 J. Phys.: Condens. Matter 21 345401
-
Analysis and optimization of the active rigidity joint
Justin Manzo and Ephrahim Garcia 2009 Smart Mater. Struct. 18 125020
-
One-dimensional impenetrable anyons in thermal equilibrium: II. Determinant representation for the dynamic correlation functions
Ovidiu I Pâţu et al 2008 J. Phys. A: Math. Theor. 41 255205
-
Vacuum bubbles in a de Sitter background and black hole pair creation
Bum-Hoon Lee and Wonwoo Lee 2009 Class. Quantum Grav. 26 225002
-
Light-cone sum rules for B → π form factors revisited
G. Duplancić et al JHEP04(2008)014
-
Dynamics of binary mixtures in inhomogeneous temperatures
G Gonnella et al 2008 J. Phys. A: Math. Theor. 41 105001
-
CAD model for circuit parameters of superconducting-based hybrid planar transmission lines
Hamid Reza Mohebbi and A Hamed Majedi 2009 Supercond. Sci. Technol. 22 125028
-
Iodine K-edge EXAFS analysis of iodide ion-cyclodextrin inclusion complexes in aqueous solution
T Kaneko et al 2009 J. Phys.: Conf. Ser. 190 012062
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