Au implantation at 32 keV into Si(100), in a fluence range of 1 × 10¹⁵–1 × 10¹⁷ cm⁻², has been used to produce a gold-rich damaged Si layer of thickness around 30 nm. Local recrystallization of this layer, induced by 1.5 MeV Au irradiation, to a fluence of 1 × 10¹⁵ cm⁻², has been studied using Raman scattering, photoluminescence (PL) and x-ray photoemission spectroscopy (XPS). For a sample with a low energy Au fluence of 5 × 10¹⁵ cm⁻², the MeV Au irradiation has been found to result in Si nanocrystal (NC) formation. The size of the NCs, as estimated from the PL data, has been found to be about 4 nm, which agrees well with the result of a thermal spike model calculation. Annealing of the sample at 500 °C resulted in an enhanced PL signal, without any significant shift in peak position, indicating an increase in the local concentration of the NCs. In the case of samples with an initial Au fluence above 1 × 10¹⁶ cm⁻², the MeV Au irradiation has been found to result in better overall recrystallization of the amorphous layer, with silicide formation as observed by XPS. However, there was no PL signal, indicating the absence of Si NCs in the system. The results suggest that the initial amorphizing Au fluence plays a crucial role in Si NC formation induced by MeV ion irradiation.