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Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates

Eun Ju Bae1, Yo-Sep Min1, Un Jeong Kim1 and Wanjun Park2,3

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We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 µm−2, which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics.


PACS

85.35.Kt Nanotube devices

85.30.De Semiconductor-device characterization, design, and modeling

85.30.Tv Field effect devices

Subjects

Electronics and devices

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 49 (12 December 2007)

Received 4 June 2007, in final form 27 September 2007

Published 15 November 2007



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