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Understanding the 3D structure of \mathrm {GaAs\langle 111\rangle B} nanowires

Lisa S Karlsson1, Kimberly A Dick2, Jakob B Wagner1, Jan-Olle Malm1, Knut Deppert2, Lars Samuelson2 and L Reine Wallenberg1

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The effects of lamellar twinning in epitaxial particle-assisted \mathrm {GaAs}\langle
111\rangle \mathrm {B} nanowires are investigated in an extensive high resolution electron microscopy (HRTEM) study of the low index zones \langle \bar {1}00\rangle , \langle \bar {1}\bar {1}0\rangle , \langle 1\bar {1}\bar {1}\rangle and \langle 1\bar {1}\bar {2}\rangle . As these directions are non-parallel to the (\bar {1}\bar {1}\bar {1} ) twin planes we find that the twin segments exhibit two different zone axes as a consequence of twinning. In the first three cases the alternative zones were found to be \langle 1\bar {2}\bar {2}\rangle , \langle 11\bar {4}\rangle and \langle 11\bar {5}\rangle . These findings are supported by a comparison of experimental HRTEM images and multi-slice simulations along with fast Fourier transform mapping. From the appearance of non-overlapping regions we conclude that the nanowires are bound by {111} facets only. The twin formation and the development of the stable side facets are discussed.


PACS

61.46.-w Structure of nanoscale materials

68.55.-a Thin film structure and morphology

68.37.Lp Transmission electron microscopy (TEM)

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

81.16.-c Methods of nanofabrication and processing

Subjects

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 48 (5 December 2007)

Received 31 August 2007, in final form 17 October 2007

Published 1 November 2007



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