Q Ahsanulhaq et al 2007 Nanotechnology 18 485307 doi:10.1088/0957-4484/18/48/485307
Q Ahsanulhaq, Jin-Hwan Kim and Yoon-Bong Hahn1
Show affiliationsControlled, ordered arrays of ZnO nanorods having a high aspect ratio of ~30:1 and diameter of ~50 nm were fabricated on silicon substrates by combining electron-beam lithography and simple solution growth techniques. This top-down and bottom-up hybrid approach resulted in excellent control of periodicity, location, and density of ZnO nanorod arrays on silicon substrates. The field emission measurements from the as-grown ZnO nanorod arrays showed a low turn-on field of ~2.85 V µm−1 and a high field-enhancement factor (β) of ~1.68 × 103.
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.46.-w Structure of nanoscale materials
79.70.+q Field emission, ionization, evaporation, and desorption
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Condensed matter: electrical, magnetic and optical
Issue 48 (5 December 2007)
Received 3 September 2007, in final form 7 October 2007
Published 1 November 2007
Q Ahsanulhaq et al 2007 Nanotechnology 18 485307
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