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Resistance switching of an individual Ag2S/Ag nanowire heterostructure

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa and Masakazu Aono

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Ag/Cu-based chalcogenide ionic conductors are candidates for use in applications in resistance-switching and nonvolatile memory devices. We report the investigation of the electrical properties of individual Ag2S/Ag heteronanowires (HNWs) by atomic force microscopy (AFM) using a nanoscale-tip electrode. Hysteretic current–voltage (IV) curves and the polarity-dependent resistance-switching phenomenon in an individual Ag2S/Ag HNW were observed. A local impedance spectroscopy measurement of Ag2S/Ag HNWs was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the electrode/mixed conductor. It is proposed that reversible resistance switching originates from the creation and rupture of filament-like conducting pathways inside the Ag2S/Ag HNW.


PACS

73.40.Ns Metal-nonmetal contacts

73.63.Nm Quantum wires

84.30.Sk Pulse and digital circuits

Subjects

Electronics and devices

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 48 (5 December 2007)

Received 25 June 2007, in final form 6 October 2007

Published 30 October 2007



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