B W Jacobs et al 2007 Nanotechnology 18 475710 doi:10.1088/0957-4484/18/47/475710
B W Jacobs1, V M Ayres1, R E Stallcup2, A Hartman2, M A Tupta3, A D Baczewski1, M A Crimp1, J B Halpern4, M He4 and H C Shaw5
Show affiliationsTwo-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. All measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.
73.63.-b Electronic transport in nanoscale materials and structures
73.30.+y Surface double layers, Schottky barriers, and work functions
Issue 47 (28 November 2007)
Received 2 August 2007, in final form 20 September 2007
Published 19 October 2007
B W Jacobs et al 2007 Nanotechnology 18 475710
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