A Bernardi et al 2007 Nanotechnology 18 475401 doi:10.1088/0957-4484/18/47/475401
A Bernardi, M I Alonso, J S Reparaz, A R Goñi, P D Lacharmoise, J O Ossó1 and M Garriga
Show affiliationsWe follow the growth of islands with different shapes by monitoring the strain relaxation by reflection high energy electron diffraction (RHEED). Comparing a bimodal ensemble of pyramids and domes with a monomodal distribution of C-induced domes, we observe different relaxation pathways and a growth mode change from Stranski–Krastanow to Volmer–Weber. We also study the changes induced by the capping process with Si. Small strains in thin cap layers are revealed by spectroscopic ellipsometry. Raman spectroscopy is employed to probe the built-in strain and silicon intermixing in different types of islands, evidencing that smaller islands are enriched in Si and effectively recompressed, whereas bigger relaxed dots remain substantially unaffected.
68.65.Hb Quantum dots (patterned in quantum wells)
78.30.Am Elemental semiconductors and insulators
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 47 (28 November 2007)
Received 13 July 2007, in final form 26 September 2007
Published 17 October 2007
A Bernardi et al 2007 Nanotechnology 18 475401
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