Rong Xiang et al 2007 Nanotechnology 18 415703 doi:10.1088/0957-4484/18/41/415703
Rong Xiang1, Guohua Luo, Zhou Yang, Qiang Zhang, Weizhong Qian and Fei Wei2
Show affiliationsAn easy approach to control the carbon nanotube (CNT) array selectivity on Si/SiO2 in the floating chemical vapor deposition (CVD) method by adjusting the operation temperature is demonstrated. Aligned CNTs can be obtained directly on Si using a standard procedure at a relatively low temperature. After analyzing the temperature influence on different substrates, an attempt to grow an ultra-long CNT forest at the optimized temperature and without any feedstock diffusion limitation is discussed.
81.16.Be Chemical synthesis methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Issue 41 (17 October 2007)
Received 17 June 2007, in final form 5 August 2007
Published 12 September 2007
Rong Xiang et al 2007 Nanotechnology 18 415703
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