F J Rueß et al 2007 Nanotechnology 18 044023 doi:10.1088/0957-4484/18/4/044023
F J Rueß1,2, K E J Goh1,2, M J Butcher2, T C G Reusch1,2, L Oberbeck1,2, B Weber2, A R Hamilton2 and M Y Simmons1,2
Show affiliationsWe demonstrate the use of a scanning tunnelling microscope (STM) to pattern buried, highly planar phosphorus-doped silicon wires with widths down to the sub-10 nm level. We confirm the structural integrity of these wires using both buried dopant imaging techniques and ex situ electrical characterization. Four terminal I–V characteristics at 4 K show ohmic behaviour for all wires with resistivities between 1 and 24 × 10−8 Ω cm. Magnetotransport measurements reveal that conduction is dominated by disordered scattering with quantum corrections consistent with 2D weak localization theory. Our results show that these quantum corrections become more pronounced as the electron phase coherence length approaches the width of the wire.
68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.63.-b Electronic transport in nanoscale materials and structures
Issue 4 (31 January 2007)
Received 16 August 2006, in final form 3 November 2006
Published 12 December 2006
F J Rueß et al 2007 Nanotechnology 18 044023
F J Rueß et al 2005 Nanotechnology 16 2446
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