X M Wen et al 2007 Nanotechnology 18 315403 doi:10.1088/0957-4484/18/31/315403
X M Wen1,2, J A Davis2, D McDonald2, L V Dao2, P Hannaford2, V A Coleman3, H H Tan3, C Jagadish3, K Koike4, S Sasa4, M Inoue4 and M Yano4
Show affiliationsWe have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump–probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700–850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination.
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electrical, magnetic and optical
Issue 31 (8 August 2007)
Received 22 April 2007, in final form 14 June 2007
Published 6 July 2007
X M Wen et al 2007 Nanotechnology 18 315403
X M Wen et al 2007 J. Phys.: Condens. Matter 19 386213
B J Dalton 2007 J. Phys.: Conf. Ser. 67 012059
Xiaoming Wen et al 2007 J. Phys. D: Appl. Phys. 40 3573
Saeed Ghanbari et al 2007 J. Phys. B: At. Mol. Opt. Phys. 40 1283
Xiaoming Wen et al 2007 New J. Phys. 9 337
J M Peek et al 2007 J. Phys. B: At. Mol. Opt. Phys. 40 565
Jes K. Jørgensen and Ewine F. van Dishoeck 2010 ApJ 710 L72
David L Wiltshire 2007 New J. Phys. 9 377
Stephen E. Healey et al. 2008 ApJS 175 97