Jordi Arbiol et al 2007 Nanotechnology 18 305606 doi:10.1088/0957-4484/18/30/305606
Jordi Arbiol1,2, Billel Kalache3, Pere Roca i Cabarrocas3, Joan Ramon Morante2 and Anna Fontcuberta i Morral3,4
Show affiliationsUnlike typical Au used as a catalyst for the synthesis of silicon nanowires via the vapour–liquid–solid mechanism, Cu has been found to induce a synthesis process governed by the vapour–solid–solid mechanism. Moreover, the temperature window for obtaining high-quality wires with Cu has been found to be relatively smaller than that shown by the Au: from 600 to 650 °C. However, high-resolution transmission electron microscopy analysis reveals significant new properties of the nanowires obtained. They have the peculiarity of successively switching the silicon structure from diamond to the wurtzite phase along the growth direction. This change of the crystalline structure implies that it has an important impact on the transport properties and characteristics of electronic devices. The results will be important for the future integration and application of silicon, where electrical and thermal transport properties play a significant role.
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.07.-b Nanoscale materials and structures: fabrication and characterization
Issue 30 (1 August 2007)
Received 26 April 2007, in final form 3 June 2007
Published 29 June 2007
Jordi Arbiol et al 2007 Nanotechnology 18 305606
Aaron J. Romanowsky et al. 2009 The Astronomical Journal 137 4956
Rodrigo Aros et al 2003 Class. Quantum Grav. 20 2937
Stephen H Simpson and Simon Hanna 2009 Nanotechnology 20 395710
L M Picco et al 2007 Nanotechnology 18 044030
M Antognozzi et al 2008 Nanotechnology 19 384002
Graham Gibson et al 2008 J. Opt. A: Pure Appl. Opt. 10 044009
Andreas Engel and Mervyn Miles 2008 Nanotechnology 19 380201
L M Picco et al 2008 Nanotechnology 19 384018
Enio Lima Jr et al 2009 Nanotechnology 20 045606