David Fuster et al 2007 Nanotechnology 18 035604 doi:10.1088/0957-4484/18/3/035604
David Fuster1, Benito Alén1, Luisa González1, Yolanda González1, Juan Martínez-Pastor2, María Ujué González1,3 and Jorge M García1
Show affiliationsIn this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θR<θc. At this θR, the spontaneous formation of isolated quantum wires takes place. For θ>θR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires.
Issue 3 (24 January 2007)
Received 4 September 2006, in final form 31 October 2006
Published 3 January 2007
David Fuster et al 2007 Nanotechnology 18 035604
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