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Plasmonically enhanced emission from a group-III nitride nanowire emitter

Michael A Mastro1,3, Jaime A Freitas Jr1, Orest Glembocki1, Charles R Eddy Jr1, R T Holm1, Rich L Henry1, Josh Caldwell1, Ronald W Rendell1, Fritz Kub1 and J Kim2,3

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The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.


PACS

78.55.Cr III-V semiconductors

73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

81.16.Be Chemical synthesis methods

61.46.-w Structure of nanoscale materials

78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 26 (4 July 2007)

Received 5 April 2007, in final form 9 May 2007

Published 5 June 2007



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