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Photoluminescence from diameter-selected ZnO nanorod arrays

Ye Sun and Michael N R Ashfold1

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Arrays of ZnO nanorods with different, user-controlled, diameters were formed on Si substrates by 193 nm pulsed laser deposition in a low background pressure of oxygen. The effect of nanorod diameter on the photoluminescence exhibited by these arrays was investigated, as a function of incident ultraviolet (UV, 325 nm) laser intensity. Nanorods with large surface to volume ratios can exhibit high UV (~380 nm) emission efficiencies, particularly when excited at higher incident intensities. Pre-illumination of such nanorods with 325 nm radiation serves to enhance the UV emission measured at lower incident intensities. These observations are rationalized in terms of photo-induced desorption of surface-bound oxygen, resulting in a quenching of the depletion layer at the ZnO surface. These findings serve to reinforce the potential of ZnO nanostructures for optoelectronic device applications.


PACS

78.55.Et II-VI semiconductors

78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 24 (20 June 2007)

Received 23 November 2006, in final form 20 March 2007

Published 25 May 2007



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