C C Escott et al 2007 Nanotechnology 18 235401 doi:10.1088/0957-4484/18/23/235401
C C Escott1, F E Hudson1, V C Chan1, K D Petersson1,2, R G Clark3 and A S Dzurak1
Show affiliationsWe present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n+) dots (size range 50–500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70–75 donors per dot should be realizable. We comment on methods for further reducing this number.
Issue 23 (13 June 2007)
Received 16 February 2007, in final form 30 March 2007
Published 8 May 2007
C C Escott et al 2007 Nanotechnology 18 235401
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