Mariano A Zimmler et al 2007 Nanotechnology 18 235205 doi:10.1088/0957-4484/18/23/235205
Mariano A Zimmler1, Jiming Bao1, Ilan Shalish1, Wei Yi1, Joonah Yoon1,2, Venkatesh Narayanamurti1 and Federico Capasso1,3
Show affiliationsWe present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p–n junction model is generally not applicable to this kind of device structure.
85.60.Jb Light-emitting devices
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 23 (13 June 2007)
Received 23 March 2007
Published 16 May 2007
Mariano A Zimmler et al 2007 Nanotechnology 18 235205
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