Qiliang Li et al 2007 Nanotechnology 18 235204 doi:10.1088/0957-4484/18/23/235204
Qiliang Li1,4, Xiaoxiao Zhu1,2, Hao D Xiong1, Sang-Mo Koo3, D E Ioannou2, Joseph J Kopanski1, J S Suehle1 and C A Richter1,4
Show affiliationsWe report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible write/read/erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.
81.07.-b Nanoscale materials and structures: fabrication and characterization
Issue 23 (13 June 2007)
Received 8 February 2007, in final form 23 April 2007
Published 16 May 2007
Qiliang Li et al 2007 Nanotechnology 18 235204
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