Ying-Ling Liu et al 2007 Nanotechnology 18 225701 doi:10.1088/0957-4484/18/22/225701
Ying-Ling Liu1,3, Chuan-Shun Liu1, Chin-I Cho1 and Ming-Jyh Hwu2
Show affiliationsPolyhedral oligomeric silsequioxane (POSS) monomer was fixed to a silicon surface by reacting octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) with the OH-terminated silicon surface in the presence of tin (II) chloride. The POSS cage layer then served as a nanoporous interlayer to reduce the dielectric constants of polyimide films on silicon surfaces. The chemical structure and surface morphology of OG-POSS modified silicon surfaces were characterized with XPS. With the introduction of a POSS nanopored interlayer, the dielectric constants of polyimide films were reduced.
77.55.+f Dielectric thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces
77.22.Ch Permittivity (dielectric function)
Condensed matter: electrical, magnetic and optical
Issue 22 (6 June 2007)
Received 21 December 2006, in final form 11 April 2007
Published 4 May 2007
Ying-Ling Liu et al 2007 Nanotechnology 18 225701
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