Spiros Gardelis et al 2007 Nanotechnology 18 115705 doi:10.1088/0957-4484/18/11/115705
Spiros Gardelis1, Ioannis Tsiaoussis2, Nikolaos Frangis2 and Androula G Nassiopoulou1
Show affiliationsWe developed a method for fabricating ultra-thin (18–80 nm) light emitting amorphous films with embedded silicon nanocrystals by anodization of bulk crystalline Si in the transition regime between porosification and electropolishing using short mono-pulses of anodization current. The size of the nanocrystals decreased with increasing current density and it was in the range of 3–7 nm with current densities in the range of 130–390 mA cm−2. At the highest current density used the film/substrate interface was very sharp, while at lower current densities the interface contained nanostructured silicon spikes protruding from the substrate into the amorphous film. The samples were characterized by high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and photoluminescence.
81.15.Pq Electrodeposition, electroplating
78.30.Am Elemental semiconductors and insulators
68.55.-a Thin film structure and morphology
Issue 11 (21 March 2007)
Received 22 August 2006, in final form 3 January 2007
Published 7 February 2007
Spiros Gardelis et al 2007 Nanotechnology 18 115705
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