Yong-Kwan Kim et al 2007 Nanotechnology 18 015304 doi:10.1088/0957-4484/18/1/015304
Yong-Kwan Kim1, Sung Joon Park1, Jae Pil Koo1, Gyu Tae Kim2, Seunghun Hong3 and Jeong Sook Ha1,4
Show affiliationsWe developed a method to precisely control the locations and orientations of deposited divanadium pentoxide (V2O5) nanowires on SiO2 surfaces using chemically functionalized patterns. The nanowires were deposited onto the substrates either from solution or via the edge transfer mechanism of micro-contact printing. In both cases, negatively charged V2O5 nanowires showed a strong adsorption selectivity onto 3-aminopropyltriethoxysilane (APS) self-assembled monolayers (SAMs) with positively charged functional groups, whereas the SAMs with non-polar and neutral terminal groups of octadecyltrichlorosilane (OTS) worked as perfect passivation layers. In particular, directional alignment of nanowires inside the chemically patterned area, depending upon the shapes of the patterns, was observed. The wires were aligned along the long axis of the pattern when the width of the APS pattern was as small as 1 µm. This strategy allows us to control the adsorption and alignment of V2O5 nanowires on the substrates, which could be used for various nano-device applications such as interconnection of electronic circuits.
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.Rf Nanoscale pattern formation
73.63.-b Electronic transport in nanoscale materials and structures
Issue 1 (10 January 2007)
Received 5 June 2006, in final form 17 October 2006
Published 8 December 2006
Yong-Kwan Kim et al 2007 Nanotechnology 18 015304
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