Changxin Chen et al 2006 Nanotechnology 17 2192 doi:10.1088/0957-4484/17/9/019
Changxin Chen, Lijun Yan, Eric Siu-Wai Kong and Yafei Zhang
Show affiliationsA simple ultrasonic nanowelding technique has been developed to reliably bond single-wall carbon nanotubes (SWCNTs) onto metal electrodes, by pressing SWCNTs against electrodes under a vibrating force at ultrasonic frequency. The bonds formed have been demonstrated to be mechanically robust. Using this technique, a stable low-Ohmic contact between SWCNTs and metal electrodes was achieved, with resistances in the range of 8–24 kΩ for a 1 µm long metallic SWCNT at room temperature. The performance of carbon nanotube field-effect transistors (FETs) fabricated using this ultrasonic nanowelding method has also been greatly improved. Transconductance as high as 3.6 µS among the solid-state back-gate individual nanotube FETs has been achieved.
73.40.Cg Contact resistance, contact potential
Surfaces, interfaces and thin films
Issue 9 (14 May 2006)
Received 16 December 2005, in final form 16 February 2006
Published 31 March 2006
A Corrigendum for this article has been published in 2007 Nanotechnology 18 259001
Changxin Chen et al 2006 Nanotechnology 17 2192
Liu Zugang et al 1996 J. Phys.: Condens. Matter 8 3221
Tristan Hübsch 1999 Class. Quantum Grav. 16 L51
T Li et al 2006 Phys. Med. Biol. 51 253
W H Emerson 2004 Metrologia 41 L33
G. Platania and R. Rosania 1997 Europhys. Lett. 37 585
P Weinberger et al 1996 J. Phys.: Condens. Matter 8 7677
John D Barrow and Hideo Kodama 2001 Class. Quantum Grav. 18 1753
Joaquim Anacleto and Joaquim Alberto C Anacleto 2008 Eur. J. Phys. 29 555
Shaaban Khalil 2002 J. Phys. G: Nucl. Part. Phys. 28 2207