C M Park et al 2006 Nanotechnology 17 952 doi:10.1088/0957-4484/17/4/019
C M Park, Y S Park, Hyunsik Im and T W Kang
Show affiliationsThe growth and optical properties of GaN nanorods grown on Si(111) substrates by rf plasma assisted molecular-beam epitaxy are investigated by means of field emission scanning electron microscopy and photoluminescence measurements as a function of growth time. It is clearly demonstrated that the rate of growth of the nanorod diameter starts to increase after ~90 min because of the coalescence of neighbouring nanorods. And the optical properties of the samples grown at a high growth rate are dramatically changed due to induced defects. The critical diameter for defect-free GaN nanorods is determined as below ~140 nm under N-rich conditions.
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
79.70.+q Field emission, ionization, evaporation, and desorption
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
Condensed matter: electrical, magnetic and optical
Issue 4 (28 February 2006)
Received 23 September 2005, in final form 5 December 2005
Published 30 January 2006
C M Park et al 2006 Nanotechnology 17 952
S Eren San 2005 J. Radiol. Prot. 25 93
Ken Dobson 1998 Phys. Educ. 33 330
C Grimani et al 2004 Class. Quantum Grav. 21 S629
J B Van de Kamer et al 2001 Phys. Med. Biol. 46 183
A Bette and S Zakrzewski 1997 J. Phys. A: Math. Gen. 30 195
Róbert Horváth et al 2003 J. Micromech. Microeng. 13 419
V. L. Bulatov and P. E. Kornilovitch 2005 Europhys. Lett. 71 352
H Dimmelmeier et al 2002 Class. Quantum Grav. 19 1291
P Moskal et al 2003 J. Phys. G: Nucl. Part. Phys. 29 2235