Young-Jin Choi et al 2006 Nanotechnology 17 3775 doi:10.1088/0957-4484/17/15/027
Young-Jin Choi1,2, In-Sung Hwang1, Jae-Hwan Park1, Sahn Nahm2 and Jae-Gwan Park1
Show affiliationsThe synthesis of CdSxSe1−x (0<x<1) ternary alloy nanowires on an Au-coated Si substrate by a pulsed laser ablation process in a hot-wall-type chamber was studied. The diameter and length of the synthesized alloyed nanowires were 50–100 nm and several tens of micrometres, respectively. X-ray diffraction analysis showed that the resulting nanowires have a hexagonal wurtzite crystalline structure. The diffraction peaks were shifted toward the higher value of 2θ as the value of x increases, which indicates that the lattice constant and unit cell volume scales linearly with the composition. Based on the photoluminescence analysis, we found that the direct band gap of the nanowires also changes linearly with the composition, which means that the energy band gap could be systematically modulated in the spectral region from 1.74 to 2.45 eV.
81.16.Mk Laser-assisted deposition
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Issue 15 (14 August 2006)
Received 7 February 2006, in final form 16 June 2006
Published 3 July 2006
Young-Jin Choi et al 2006 Nanotechnology 17 3775
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