Sang-Mo Koo et al 2005 Nanotechnology 16 1482 doi:10.1088/0957-4484/16/9/011
Sang-Mo Koo, Monica D Edelstein, Qiliang Li, Curt A Richter and Eric M Vogel
Show affiliationsSilicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors with excellent enhancement-mode characteristics and a high on/off current ratio ~107. SiNWFETs show significant improvement in the thermal emission leakage (~6 × 10−13 A µm−1) compared to reference FETs with a larger channel width (~7 × 10−10 A µm−1). The drain current level depends substantially on the contact metal work function as determined by examining devices with different source/drain contacts of Ti (≈4.33 eV) and Cr (≈4.50 eV). The different conduction mechanisms for accumulation- and inversion-mode operation are discussed and compared with two-dimensional numerical simulation results.
85.35.-p Nanoelectronic devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
Issue 9 (September 2005)
Received 22 April 2005
Published 29 June 2005
Sang-Mo Koo et al 2005 Nanotechnology 16 1482
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