V Millar et al 2005 Nanotechnology 16 823 doi:10.1088/0957-4484/16/6/034
V Millar, C I Pakes, S Prawer, B Rout and D N Jamieson
Show affiliationsWe demonstrate registration of the location of the impact site of single ions using a thin film polymethyl methacrylate resist on a SiO2/Si substrate. Carbon nanotube-based atomic force microscopy is used to reveal craters in the surface of chemically developed films, consistent with the development of latent damage induced by single-ion impacts. The responses of thin PMMA films to the implantation of He+ and Ga+ ions indicate the role of electronic and nuclear energy loss mechanisms at the single-ion level.
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
68.37.Ps Atomic force microscopy (AFM)
61.80.-x Physical radiation effects, radiation damage
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 6 (June 2005)
Received 4 January 2005, in final form 9 March 2005
Published 11 April 2005
V Millar et al 2005 Nanotechnology 16 823
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