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Lateral manipulation of single atoms at semiconductor surfaces using atomic force microscopy

Noriaki Oyabu1, Yoshiaki Sugimoto1, Masayuki Abe1, Óscar Custance2,3 and Seizo Morita1,2

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Experimental results on the lateral manipulation of single atoms at semiconductor surfaces using non-contact atomic force microscopy (NC-AFM) are presented. These experiments prove that deposited adsorbates on top of a surface, as well as intrinsic adatoms of semiconductor surfaces, are suitable for being manipulated using the short-range interaction force acting between the outermost atoms of a semiconductor tip and the atoms at the surface. The analysis of the data from some of the experiments presented here indicates a pulling process of the tip on the manipulated atoms. The atom-by-atom creation, at room temperature, of patterns composed by a few inherent atoms of a heterogeneous surface is also presented.


PACS

68.47.Fg Semiconductor surfaces

68.37.Ps Atomic force microscopy (AFM)

Subjects

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 3 (March 2005)

Received 4 October 2004, in final form 30 November 2004

Published 28 January 2005



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