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Visualization of electrons and holes localized in the thin gate film of metal-oxide-nitride-oxide-semiconductor type Flash memory by scanning nonlinear dielectric microscopy

Koichiro Honda1, Sunao Hashimoto2 and Yasuo Cho2

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By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2–Si3N4–SiO2 (ONO) film of the metal-oxide-nitride-oxide-semiconductor (MONOS) type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.


PACS

85.30.Tv Field effect devices

68.37.Ps Atomic force microscopy (AFM)

84.30.Sk Pulse and digital circuits

Subjects

Electronics and devices

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 3 (March 2005)

Received 5 October 2004, in final form 16 December 2004

Published 25 January 2005



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