Koichiro Honda et al 2005 Nanotechnology 16 S90 doi:10.1088/0957-4484/16/3/017
Koichiro Honda1, Sunao Hashimoto2 and Yasuo Cho2
Show affiliationsBy applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2–Si3N4–SiO2 (ONO) film of the metal-oxide-nitride-oxide-semiconductor (MONOS) type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.
Issue 3 (March 2005)
Received 5 October 2004, in final form 16 December 2004
Published 25 January 2005
Koichiro Honda et al 2005 Nanotechnology 16 S90
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