X H Ji et al 2005 Nanotechnology 16 3069 doi:10.1088/0957-4484/16/12/057
Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique
X H Ji, S P Lau, H Y Yang and S F Yu
Show affiliationsWe report the synthesis of aligned wurtzite InN nanofingers by the ion-beam assisted filtered cathodic vacuum arc technique. InN nanofingers exhibit a polycrystalline structure. Photoluminescence (PL) and field emission properties of the InN nanofingers were studied. The PL emission peak was centred at ~1.1 eV with a full width at half maximum of 105 meV. The field emission characteristic was observed from the InN nanofingers with turn-on field of 9.7 V µm−1 at a current density of 10 µA cm−2. The formation of InN nanofingers was attributed to the Volmer–Weber growth mode.
- PACS
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81.07.-b Nanoscale materials and structures: fabrication and characterization
79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
- Subjects
- Dates
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Issue 12 (December 2005)
Received 2 August 2005, in final form 7 October 2005
Published 7 November 2005
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Aligned InN nanofingers prepared by the ion-beam assisted filtered cathodic vacuum arc technique
X H Ji et al 2005 Nanotechnology 16 3069
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