Dinesh K Aswal et al 2005 Nanotechnology 16 3064 doi:10.1088/0957-4484/16/12/056
Fowler–Nordheim tunnelling and electrically stressed breakdown of 3-mercaptopropyltrimethoxysilane self-assembled monolayers
Dinesh K Aswal1,2,3, Stephane Lenfant1, David Guerin1, Jatinder V Yakhmi1,2 and Dominique Vuillaume1
Show affiliationsWe report the confirmed occurrence of Fowler–Nordheim (FN) electron tunnelling in p+ Si (SiOx)/self-assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS)/Au structures. The statistically favoured values of the effective mass and energy barrier heights for electrons are determined to be in the ranges 0.15–0.18 me and 1.3–1.5 eV, respectively. The electrically stressed breakdown of the monolayers is observed to take place at very high fields, i.e. 16–50 MV cm−1. Prior to the breakdown, switching of FN currents between different conduction states was observed; this is found to be related to a change in the electrical properties of monolayers owing to the creation of field-induced defects.
- PACS
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73.61.Ph Polymers; organic compounds
71.20.Rv Polymers and organic compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
- Subjects
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Soft matter, liquids and polymers
- Dates
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Issue 12 (December 2005)
Received 28 July 2005, in final form 5 October 2005
Published 7 November 2005
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Fowler–Nordheim tunnelling and electrically stressed breakdown of 3-mercaptopropyltrimethoxysilane self-assembled monolayers
Dinesh K Aswal et al 2005 Nanotechnology 16 3064
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