Junichiro Takeda et al 2005 Nanotechnology 16 2954 doi:10.1088/0957-4484/16/12/038
Junichiro Takeda1, Masashi Akabori1,3, Junichi Motohisa1, Richard Nötzel2 and Takashi Fukui1
Show affiliationsGaAs hexagonal air-hole arrays fabricated by selective-area metal-organic vapour phase epitaxy (SA-MOVPE) on patterned GaAs(111)B substrates are promising for applications to hexagonal air-hole-type two-dimensional photonic crystal (2D-PhC) slabs, because the grown structures exhibit smooth flat surfaces surrounded by crystal facets. In this paper, we describe SA-MOVPE carried out under various gas-flow sequences in order to reduce the growth temperature, and to obtain uniform air-hole arrays without lateral over-growth (LOG). We found that the growth rate in the pattern region and LOG were closely related to the effective As coverage and the desorption rate of the source materials. By optimizing SA-MOVPE, we obtained uniform hexagonal air-hole arrays with almost no LOG for arrays with 500–400 nm periodicity using alternate supply of the source materials (flow-rate modulation epitaxy mode). Finally, we successfully fabricated air-bridge-type hole arrays using selective etching of a sacrificial layer for vertical confinement of light in 2D-PhCs.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
68.47.Fg Semiconductor surfaces
42.70.Qs Photonic bandgap materials
Issue 12 (December 2005)
Received 24 August 2005, in final form 30 September 2005
Published 25 October 2005
Junichiro Takeda et al 2005 Nanotechnology 16 2954
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