C X Cui et al 2005 Nanotechnology 16 2661 doi:10.1088/0957-4484/16/11/032
C X Cui, Y H Chen, C Zhao, P Jin, G X Shi, Y L Wang, B Xu and Z G Wang
Show affiliationsA novel approach for positioning InAs islands on GaAs(110) by cleaved-edge overgrowth is reported. The first growth sample contains a strained InxGa1−xAs /GaAs superlattice of varying indium fraction and thickness, which acts as a strain nanopattern for the cleaved edge overgrowth. The formation of aligned islands is observed by means of atomic force microscopy. The ordering of the aligned islands and the structure of a single InAs island are found to depend on the properties of the underlying InxGa1−xAs /GaAs superlattice and molecular beam epitaxy growth conditions.
81.07.-b Nanoscale materials and structures: fabrication and characterization
Issue 11 (November 2005)
Received 22 April 2005, in final form 4 August 2005
Published 30 September 2005
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