L Ding et al 2005 Nanotechnology 16 2657 doi:10.1088/0957-4484/16/11/031
L Ding1, T P Chen1, Y Liu1, C Y Ng1 and S Fung2
Show affiliationsThe structure of Si nanocrystals (nc-Si) embedded in SiO2 is promising for achieving optical gain and waveguiding with the advantage of full compatibility with the matured Si technology. In this paper, we report an approach to optical-constant profiling for such a planar waveguide structure formed by Si ion implantation into a SiO2 thin film based on spectroscopic ellipsometry (SE). With the nc-Si optical constants calculated from the Forouhi–Bloomer model and the nc-Si depth profile obtained from secondary ion mass spectroscopy (SIMS) measurements, the optical properties at a given depth are simulated with the Maxwell–Garnett effective medium approximation (EMA). Then an SE fitting is carried out, and the optical constants of nc-Si are extracted from the best fitting. Finally, the depth profile of optical constants of the structure is obtained from the EMA calculation. The result also suggests that the structure has a very low optical loss in the visible to infrared spectral range.
78.67.Bf Nanocrystals and nanoparticles
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
Condensed matter: electrical, magnetic and optical
Issue 11 (November 2005)
Received 19 July 2005, in final form 25 July 2005
Published 30 September 2005
L Ding et al 2005 Nanotechnology 16 2657
S Golin 1989 J. Phys. A: Math. Gen. 22 4573
Hyoung-Gyu Choi et al 2009 J. Opt. A: Pure Appl. Opt. 11 125101
H Lichtenberg et al 2009 J. Phys.: Conf. Ser. 190 012203
K S Aleksandrov et al 2005 Phys.-Usp. 48 1199
Tzenka Miteva et al 2008 New J. Phys. 10 103002
Hai-Tao Zhang and Xian-Hui Chen 2005 Nanotechnology 16 2288
R J Plevin and S Mueller 2008 Environ. Res. Lett. 3 024003
A S Wills et al 2006 J. Phys.: Condens. Matter 18 L37
Li Meng-Ke et al 2002 Chinese Phys. Lett. 19 1703