F J Rueß et al 2005 Nanotechnology 16 2446 doi:10.1088/0957-4484/16/10/076
F J Rueß1,2, L Oberbeck1,2, K E J Goh1,2, M J Butcher2, E Gauja1,2, A R Hamilton2 and M Y Simmons1,2
Show affiliationsWe demonstrate the use of etched registration markers for the alignment of four-terminal ex situ macroscopic contacts created by conventional optical lithography to buried nanoscale Si:P devices, patterned by hydrogen-based scanning tunnelling microscope (STM) lithography. Using SiO2 as a mask we are able to protect the silicon surface from contamination during marker fabrication and can achieve atomically flat surfaces with atomic-resolution imaging. The registration markers are shown to withstand substrate heating to ~1200 °C and epitaxial overgrowth of ~25 nm Si. Using a scanning electron microscope to position the STM tip with respect to the markers, we can achieve alignment accuracies of ~100 nm, which allows us to contact buried Si:P structures. We have applied this technique to fabricate P-doped wires of different widths and measured their I–V characteristics at 4 K, finding ohmic behaviour down to a width of ~27 nm.
85.35.-p Nanoelectronic devices
73.40.Ns Metal-nonmetal contacts
Issue 10 (October 2005)
Received 8 June 2005, in final form 8 August 2005
Published 2 September 2005
F J Rueß et al 2005 Nanotechnology 16 2446
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