Shawn M Dirk et al 2005 Nanotechnology 16 1983 doi:10.1088/0957-4484/16/10/001
Shawn M Dirk1, Stephen W Howell1, Sherry Zmuda1, Kenton Childs2, Matthew Blain1, Robert J Simonson1 and David R Wheeler1,3
Show affiliationsThis article details a simple four-step procedure to create a one-dimensional nanogap on a buried oxide substrate that relies on conventional photolithography performed on a stack of silicon/silicon oxide/silicon, metal evaporation, and hydrofluoric acid oxide removal. Once the nanogap was fabricated it was bridged with an assembly of 1,8-octanedithiol and 5 nm Au nanoparticles capped with a sacrificial dodecylamine coating. Before assembly, characterization of the nanogaps was performed through electrical measurements and SEM imaging. Post assembly, the resistance of the nanogaps was evaluated. The current increased from 70 fA to 200 µA at +1 V bias, clearly indicating a modification due to nanoparticle molecule assembly. Control experiments without nanoparticles or octanedithiol did not show an increase in current.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Issue 10 (October 2005)
Received 24 June 2005
Published 3 August 2005
Shawn M Dirk et al 2005 Nanotechnology 16 1983
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