K H Lee et al 2005 Nanotechnology 16 74 doi:10.1088/0957-4484/16/1/016
K H Lee1,4, A D Greentree2,3, J P Dinale1, C C Escott1, A S Dzurak1 and R G Clark2
Show affiliationsSolid-state systems such as P donors in Si have considerable potential for the realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analysing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behaviour, and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.
03.67.Lx Quantum computation architectures and implementations
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Issue 1 (January 2005)
Received 27 August 2004, in final form 8 November 2004
Published 2 December 2004
K H Lee et al 2005 Nanotechnology 16 74
D Mc Hugh and J Twamley 2005 New J. Phys. 7 174
V Millar et al 2005 Nanotechnology 16 823
R. D. Blum et al. 2006 The Astronomical Journal 132 2034
M Mitic et al 2008 Nanotechnology 19 265201
A M Puertas et al 2007 J. Phys.: Condens. Matter 19 205140
Dansha Jiang et al 2009 J. Phys. B: At. Mol. Opt. Phys. 42 154020
Seunghwa Ryu and Wei Cai 2008 Modelling Simul. Mater. Sci. Eng. 16 085005
T Hopf et al 2008 J. Phys.: Condens. Matter 20 415205
S N Taraskin et al 2007 J. Phys.: Condens. Matter 19 455216